BAV102; BAV103 Single general-purpose switching diodes Rev. 03 — 16 August 2007 Product data sheet Product profile 1.1 General description
Single general-purpose switching diodes, fabricated in planar technology, andencapsulated in small hermetically sealed glass SOD80C Surface-MountedDevice (SMD) packages. Product overview Type number Configuration 1.2 Features 1.3 Applications 1.4 Quick reference data Quick reference data Parameter Conditions
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes Pinning information Description Simplified outline
The marking band indicates the cathode. Ordering information Ordering information Type number Description
hermetically sealed glass surface-mounted package;
Marking codes Type number Marking code Limiting values Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter Conditions
NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 August 2007 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter Conditions
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Thermal characteristics Thermal characteristics Parameter Conditions
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Characteristics Characteristics
Tamb = 25 °C unless otherwise specified. Parameter Conditions
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 August 2007 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes Forward current as a function of forward Non-repetitive peak forward current as a function of pulse duration; maximum values Reverse current as a function of junction Diode capacitance as a function of reverse temperature voltage; typical values
NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 August 2007 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes Forward current as a function of ambient Reverse voltage as a function of ambient temperature; derating curve temperature; derating curve Test information Reverse recovery time test circuit and waveforms
NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 August 2007 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes Package outline Package outline SOD80C 10. Packing information Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. Type number Description Packing quantity
For further information and the availability of packing methods, see
NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 August 2007 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes 11. Soldering Reflow soldering footprint SOD80C Fig 10. Wave soldering footprint SOD80C
NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 August 2007 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes • The format of this data sheet has been redesigned to comply with the new identity • Legal texts have been adapted to the new company name where appropriate. • Type numbers BAV100 and BAV101 have been removed • • : added • : added • : added • • y minimized package outline drawing • • • : updated
NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 August 2007 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes 13. Legal information Data sheet status Document status[1][2] Product status[3] Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL
Definitions
malfunction of a NXP Semiconductors product can reasonably be expected toresult in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Draft — The document is a draft version only. The content is still under
Semiconductors products in such equipment or applications and therefore
internal review and subject to formal approval, which may result in
such inclusion and/or use is at the customer’s own risk.
modifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness of
Applications — Applications that are described herein for any of these
information included herein and shall have no liability for the consequences of
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for thespecified use without further testing or modification. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended Limiting values — Stress above one or more limiting values (as defined in
for quick reference only and should not be relied upon to contain detailed and
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
full information. For detailed and full information see the relevant full data
damage to the device. Limiting values are stress ratings only and operation of
sheet, which is available on request via the local NXP Semiconductors sales
the device at these or any other conditions above those given in the
office. In case of any inconsistency or conflict with the short data sheet, the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold Disclaimers
subject to the general terms and conditions of commercial sale, as publishedat , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unless
General — Information in this document is believed to be accurate and
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
reliable. However, NXP Semiconductors does not give any representations or
any inconsistency or conflict between information in this document and such
warranties, expressed or implied, as to the accuracy or completeness of such
terms and conditions, the latter will prevail.
information and shall have no liability for the consequences of use of such
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or construed as an offer to sell products that is open for acceptance or the
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grant, conveyance or implication of any license under any copyrights, patents
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limitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof. Trademarks Suitability for use — NXP Semiconductors products are not designed,
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14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 August 2007 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes 15. Contents
Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’. NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]Date of release: 16 August 2007 Document identifier: BAV102_BAV103_3
• Over the past decade, research has revealed • What did we learn from the MTA study ?some pretty sobering facts about outcomes for children with ADHD• 579 7-9 yo randomized to 4 treatments • We’ve spent a lot of time and money figuring out that many treatments don’t work as well • Treated for 14 mos, followed for 8 years• At 14 mos, M and B better than P and C• More glob