7 November 2013 Product data sheet 1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package
intended to be interfaced directly to microcontrollers, logic integrated circuits and other
2. Features and benefits
• Direct interfacing to logic level ICs
• Direct interfacing to low power gate drivers and microcontrollers
• Planar passivated for voltage ruggedness and reliability
3. Applications
• General purpose low power phase control
4. Quick reference data Quick reference data Parameter Conditions
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
Static characteristics IGT
Tj = 25 °C; VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; VD = 12 V; IT = 0.1 A; T2- G-;
NXP Semiconductors Parameter Conditions 5. Pinning information Pinning information Symbol Description Simplified outline Graphic symbol TO-92 (SOT54) 6. Ordering information Ordering information Type number Package Name Description
plastic single-ended leaded (through hole) package; 3 leads
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors 7. Limiting values Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Parameter Conditions
IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs;
T2+ G+IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs;
T2+ G-IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs;
T2- G-IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs;
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors Fig. 1. RMS on-state current as a function of surge Fig. 2. RMS on-state current as a function of lead duration; maximum values temperature; maximum values Fig. 4. Non-repetitive peak on-state current as a Fig. 3. Total power dissipation as a function of RMS function of the number of sinusoidal current on-state current; maximum values cycles; maximum values
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors 8. Thermal characteristics Thermal characteristics Parameter Conditions Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse width
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors 9. Characteristics Characteristics Parameter Conditions Static characteristics IGT
Tj = 25 °C; VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °CVD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; VD = 12 V; IG = 0.1 A; T2- G+;
Dynamic characteristics dVD/dt
rate of rise of off-state VDM = 268 V; Tj = 110 °C; (VDM = 67%
VD = 400 V; Tj = 50 °C; dIcom/dt = 0.3 A/
gate-controlled turn-on ITM = 1 A; VD = 400 V; IG = 25 mA; dIG/
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature Fig. 9. Normalized holding current as a function of junction temperature
(1) Tj = 125 °C; typical values(2) Tj = 125 °C; maximum values(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors Fig. 11. Normalized gate trigger voltage as a function of junction temperature Fig. 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors 10. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrol ed to al ow for flow of plastic and terminal irregularities. REFERENCES EUROPEAN PROJECTION ISSUE DATE Fig. 13. Package outline TO-92 (SOT54)
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
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products are sold subject to the general terms and conditions of commercial
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All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors
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All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013 NXP Semiconductors 12. Contents 1 NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]Date of release: 7 November 2013
All information provided in this document is subject to legal disclaimers. Product data sheet 7 November 2013
Clinical Senior Lecturer in Ageing and Health The evidence } There is evidence that medication review in older people can lead to an improvement in the appropriateness of prescribing } There is evidence that these changes persist (at least out to 6 months) } There is very little evidence that this process reduces adverse drug events, hospitalisation, or improves quality
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7 November 2013